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Plasma-induced band...
Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
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Persson, Clas (författare)
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- Lindefelt, Ulf (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Sernelius, Bo (författare)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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(creator_code:org_t)
- 2000
- 2000
- Engelska.
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 44:3, s. 471-476
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H-SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron-electron, hole-hole, electron-hole, electron-optical phonon and hole-optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.
Nyckelord
- electronic structure
- band-gap shifts
- electron-hole plasma
- exchange and correlation interactions
- doped semiconductors
- simulation
- silicon
- gap
- polytypes
- devices
- TECHNOLOGY
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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