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Group-IV (Si, Ge, a...
Group-IV (Si, Ge, and Sn)-doped AgAlTe2 for intermediate band solar cell from first-principles study
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Huang, Dan (författare)
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Jiang, Jing-Wen (författare)
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Guo, Jin (författare)
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Zhao, Yu-Jun (författare)
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- Chen, Rongzhen (författare)
- KTH,Materialvetenskap
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- Persson, Clas (författare)
- KTH,Materialvetenskap
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(creator_code:org_t)
- 2017-05-11
- 2017
- Engelska.
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Ingår i: Semiconductor Science and Technology. - : Institute of Physics (IOP). - 0268-1242 .- 1361-6641. ; 32:6, s. 065007-065014
- Relaterad länk:
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https://www.duo.uio....
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Earlier studies of chalcopyrites as the absorber for intermediate band solar cells (IBSCs) mainly focused on Cu-based compounds, whose intermediate band is usually empty due to its intrinsic p-type conductivity. This is not beneficial to the two sub-bandgap absorptions. In this paper, we demonstrate that the intermediate bands in group IV (Si, Ge, and Sn) doped AgAlTe2 are delocalized and mainly contributed by the anti-bonding state of group-IV elements s state and Te-p state. Overall, we suggest that Sn-doped AgAlTe2 should be a promising absorber candidate for IBSCs based on the theoretical efficiency and defect stability.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- intermediate band solar cell
- first-principles calculation
- electronic structure
- defect formation energy
- AgAlTe2
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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