Influence of Si doping on optical properties of wurtzite GaN

• The band gap shift (BGS) of Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes has been investigated at low temperature. The critical impurity concentration for the metal-non-metal transition is estimated from the generalized Drude approach for the resistivity to be about 1.0 x 10(18) cm(-3). The calculations for the BGS were carried out within a framework of the random phase approximation, taking into account the electron-electron, electron-optical phonon, and electron-ion interactions. In the wake of very recent photoluminescence measurements, we have shown and discussed the possible transitions involved in the experimental results.

Nyckelord

iii-v nitrides

doped gan

band

semiconductors

si-p,bi

shift

donor

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)