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Silicon carbide det...
Silicon carbide detectors of high-energy particles
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Violina, G. N. (författare)
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Kalinina, E. V. (författare)
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Kholujanov, G. F. (författare)
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Kossov, V. G. (författare)
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Yafaev, R. R. (författare)
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- Hallén, Anders. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Konstantinov, A. O. (författare)
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(creator_code:org_t)
- Pleiades Publishing Ltd, 2002
- 2002
- Engelska.
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:6, s. 710-713
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed.
Nyckelord
- implantation
- junctions
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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