Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN

• The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.

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acceptor binding-energies

optical-properties

shallow donors

n-type

doped semiconductors

dynamical properties

dielectric function

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