Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots

• The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Nyckelord

carrier dynamics

compound semiconductors

displacement damage

photoluminescence

Stranski-Krastanow quantum dots

enhanced radiation hardness

light-emitting-diodes

deep levels

gaas

damage

lasers

transformation

dependence

wells

degradation

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