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Phosphorus and boro...
Phosphorus and boron diffusion in silicon under equilibrium conditions
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Christensen, JS (författare)
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Kuznetsov, AY (författare)
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Svensson, BG (författare)
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(creator_code:org_t)
- AIP Publishing, 2003
- 2003
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:14, s. 2254-2256
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 degreesC) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74+/-0.07 eV and a pre-exponential factor of (8+/-5)x10(-4) cm(2)/s. In the temperature range of 810 to 1050 degreesC, boron was found to diffuse with an activation energy of 3.12+/-0.04 eV and a pre-exponential factor of 0.06+/-0.02 cm(2)/s. These results differ from those of many previous studies, but this deviation may to a large extent be attributed to slow transients before equilibrium concentrations of point defects are established at temperatures below similar to1000 degreesC. Despite a similar diffusion mechanism mediated by Si self-interstitials, P exhibits a lower activation energy than B because of stronger bonding to the Si self-interstitial.
Nyckelord
- point-defects
- surface
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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