Sökning: id:"swepub:oai:DiVA.org:kth-22635" >
Identification of h...
Identification of hydrogen related defects in proton implanted float-zone silicon
-
Leveque, P. (författare)
-
- Hallén, Anders. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
-
Svensson, B. G. (författare)
-
visa fler...
-
Wong-Leung, J. (författare)
-
Jagadish, C. (författare)
-
Privitera, V. (författare)
-
visa färre...
-
(creator_code:org_t)
- 2002-11-29
- 2003
- Engelska.
-
Ingår i: European Physical Journal. - : EDP Sciences. - 1286-0042 .- 1286-0050. ; 23:1, s. 5-9
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (V-2) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (E-c). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of V-2, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The E-c-0.32 eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the E-c-0.45 eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom ( a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy ( a V2H complex).
Nyckelord
- level transient spectroscopy
- si-a center
- irradiated silicon
- electron traps
- divacancy
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas