Scanning capacitance microscopy investigations of lnGaAs/InP quantum wells

• In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schrodinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

quantum-wells

band-offset

scanning capacitance microscopy

resolution InP

gainp

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