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Strong inter-conduc...
Strong inter-conduction-band absorption in heavily fluorine doped tin oxide
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- Canestraro, Carla Daniele (författare)
- KTH,Materialvetenskap
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- Oliveira, Marcela M. (författare)
- Departamento de Química, Universidade Federal do Paraná
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- Valaski, Rogerio (författare)
- Departamento de Física, Universidade Federal do Paraná
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- da Silva, Marcus V. S. (författare)
- Instituto de Física, Universidade Federal da Bahia
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- David, Denis G. F. (författare)
- Instituto de Física, Universidade Federal da Bahia
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- Pepe, Iuri (författare)
- Instituto de Física, Universidade Federal da Bahia
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- Ferreira da Silva, Antonio (författare)
- Instituto de Física, Universidade Federal da Bahia
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- Roman, Lucimara S. (författare)
- Departamento de Física, Universidade Federal do Paraná
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- Persson, Clas (författare)
- KTH,Materialvetenskap
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(creator_code:org_t)
- Elsevier BV, 2008
- 2008
- Engelska.
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:5, s. 1874-1879
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Annan teknik -- Övrig annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)
Nyckelord
- Tin oxide
- Transparent conducting film
- Doping
- Optical absorption
- Resistivity
- Material physics with surface physics
- Materialfysik med ytfysik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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