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Sökning: id:"swepub:oai:DiVA.org:kth-26005" > Strong inter-conduc...

Strong inter-conduction-band absorption in heavily fluorine doped tin oxide

Canestraro, Carla Daniele (författare)
KTH,Materialvetenskap
Oliveira, Marcela M. (författare)
Departamento de Química, Universidade Federal do Paraná
Valaski, Rogerio (författare)
Departamento de Física, Universidade Federal do Paraná
visa fler...
da Silva, Marcus V. S. (författare)
Instituto de Física, Universidade Federal da Bahia
David, Denis G. F. (författare)
Instituto de Física, Universidade Federal da Bahia
Pepe, Iuri (författare)
Instituto de Física, Universidade Federal da Bahia
Ferreira da Silva, Antonio (författare)
Instituto de Física, Universidade Federal da Bahia
Roman, Lucimara S. (författare)
Departamento de Física, Universidade Federal do Paraná
Persson, Clas (författare)
KTH,Materialvetenskap
visa färre...
 (creator_code:org_t)
Elsevier BV, 2008
2008
Engelska.
Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:5, s. 1874-1879
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
Stäng  
  • The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

Nyckelord

Tin oxide
Transparent conducting film
Doping
Optical absorption
Resistivity
Material physics with surface physics
Materialfysik med ytfysik

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