4H-SIC trench pMOSFETs for high-frequency CMOS inverters

• Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain capacitance) were investigated and low parasitic capacitance was achieved by the trench gate structure.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC

Harsh environment electronics

Overlapping capacitance

PMOSFET

Capacitance

CMOS integrated circuits

MOSFET devices

Device characteristics

Gate-drain capacitance

Harsh environment

High frequency HF

Parasitic capacitance

Trench gate structures

Silicon carbide

Publikations- och innehållstyp

ref (ämneskategori)

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