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Heteroepitaxy of Ga...
Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy
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- Strömberg, Axel (författare)
- KTH,Fotonik
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- Omanakuttan, Giriprasanth (författare)
- KTH,Fotonik
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- Liu, Yingjun (författare)
- KTH,Tillämpad fysik
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- Mu, Tangjie (författare)
- KTH,Tillämpad fysik
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- Xu, Zhehan (författare)
- KTH,Tillämpad fysik
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- Lourdudoss, Sebastian, 1953- (författare)
- KTH,Fotonik
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- Sun, Yan-Ting (författare)
- KTH,Fotonik
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(creator_code:org_t)
- ELSEVIER, 2020
- 2020
- Engelska.
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Ingår i: Journal of Crystal Growth. - : ELSEVIER. - 0022-0248 .- 1873-5002. ; 540
- Relaterad länk:
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https://doi.org/10.1...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Direct heteroepitaxy of GaAsP and GaP on GaAs and on Si by low-pressure hydride vapor phase epitaxy (HVPE) is investigated as prior studies for photovoltaics and non-linear optics applications. When growing GaAsP on GaAs, it is found that the ambient gas during substrate pre-heating influences the ternary composition as well as the crystalline quality of the subsequent growth. GaAs0.72P0.28 with bandgap energy of 1.76 eV has been achieved, which would be suitable for a top cell in Si tandem solar cell structures. Growth of GaP was investigated on planar GaAs as a prior study for realizing orientation patterned (OP) GaP on OP-GaAs. Threading dislocations caused by the 3.6% lattice mismatch between GaP and GaAs are suppressed by adjusting the GaCl flow, achieving a low full width at half maximum of 146 arcsec for the X-ray diffraction omega scan. Direct heteroepitaxy of GaAsP on Si aiming for achieving a GaAsP/Si dual junction solar cell is demonstrated. The inherent problem of initiating nucleation during the direct heteroepitaxy of III-V on Si by HVPE is overcome by utilizing the vapor mixing approach to grow a low-temperature GaP buffer layer on Si, followed by a GaAsP layer grown by conventional HVPE.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Line defects
- Hydride vapor phase epitaxy
- Semiconducting III-V materials
- Nonlinear optic materials
- Heterojunction semiconductor devices
- Solar cells
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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