Tight-binding calculations of the optical properties of Si nanocrystals in a SiO(2)matrix

• We develop an empirical tight binding approach for the modeling of the electronic states and optical properties of Si nanocrystals embedded in a SiO(2)matrix. To simulate the wide band gap SiO(2)matrix we use the virtual crystal approximation. The tight-binding parameters of the material with the diamond crystal lattice are fitted to the band structure of beta-cristobalite. This model of the SiO(2)matrix allows us to reproduce the band structure of real Si nanocrystals embedded in a SiO(2)matrix. In this model, we compute the absorption spectra of the system. The calculations are in an excellent agreement with experimental data. We find that an important part of the high-energy absorption is defined by the spatially indirect, but direct ink-space transitions between holes inside the nanocrystal and electrons in the matrix.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Kemiteknik -- Annan kemiteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Chemical Engineering -- Other Chemical Engineering (hsv//eng)

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