1/f Noise and Dark Current Correlation in Midwave InAs/GaSb Type-II Superlattice IR Detectors

• Herein, results from noise and dark current density studies on InAs/GaSb type-II superlattice IR detectors are presented. The activation energy of the dark current density is used to identify the dominating dark current mechanisms (generation–recombination (GR), tunneling, or diffusion dark current) as a function of temperature and bias. The bias evolution of the power spectral density (PSD) is measured in dark conditions for several temperatures. At the operating bias of the detectors, the arrays show a white noise–dominated spectrum up to 100 K with a minor 1/f contribution (corner frequency around 10 Hz), while for higher temperatures the spectra are 1/f dominated. The 1/f noise component is compared to the dominating dark current mechanism in the same temperature and bias regimes. A strong correlation between the 1/f noise component and the dominating dark current (I) is found, with the PSD proportional to I for tunneling currents and I2 for GR and diffusion currents. Very low noise coefficients of αGR = 4.8 × 10−9 Hz−1, αdiff = 1.9 × 10−10 Hz−1, and αtun = 2.1 × 10−16 A Hz−1 are observed for these detectors. 

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

1/f noise

activation energy

dark current

IR detectors

type-II superlattice

Edge detection

III-V semiconductors

Indium antimonides

Indium arsenide

Infrared detectors

Power spectral density

Spectral density

White noise

Corner frequency

Current mechanisms

Dark conditions

Diffusion currents

Inas/gasb type-ii superlattices

Power spectral densities (PSD)

Strong correlation

Tunneling current

Dark currents

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)