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Dissociation energy...
Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC
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- Janson, M S (författare)
- KTH,Elektronik
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- Hallén, Anders (författare)
- KTH,Elektronik
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- Linnarsson, Margareta K. (författare)
- KTH,Elektronik
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- Nordell, Nils (författare)
- KTH,Elektronik
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Karlsson, S (författare)
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Svensson, B G (författare)
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Materials Science Forum. ; , s. 427-430
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The thermal stability of the passivating hydrogen-aluminum complex ((HAl)-H-2) in 4H-silicon carbide has been studied by determining the effective diffusion constant for hydrogen in an AI-doped epitaxial layer. Assuming a complex comprised of one H-2 and one AI acceptor ion, the extracted diffusivities provide the dissociation frequency of the complex. The extracted frequencies cover three orders of magnitude and yield a close to perfect fit to an Arrhenius equation with the extracted dissociation energy for the (HAl)-H-2-complex equal to 1.66 (+/-0.05) eV and a pre-exponential attempt frequency nu (0) = 1.7x10(13) s(-1) in good agreement with the expected value for a first order dissociation process.
Nyckelord
- hydrogen
- passivation
- SIMS
Publikations- och innehållstyp
- vet (ämneskategori)
- kon (ämneskategori)