Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates

• It was found that for strained Si channel layers of supercritical thickness oil relaxed SiGe virtual substrates, the 1/f noise oil,average is maintained at the same level as in unstrained devices. Short gate length nMOSFETs were analyzed statistically and the noise level variation, across a large number of samples, was similar in strained and unstrained devices. The obtained noise level variation was partly related to gate length fluctuations across the wafer, which was evident from a small V-T fluctuation.

Ämnesord

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

Nyckelord

Gate lengths

High mobilities

MOSFETs

N-mosfets

Noise levels

Noise properties

Number of samples

Relaxed sige

Strained Si channels

Super-critical

Virtual substrates

Germanium

MOSFET devices

Semiconducting germanium compounds

Silicon alloys

Silicon wafers

Electrochemistry

Elektrokemi

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