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Quasi-3-dimensional...
Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors
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- Ramos Santesmases, David (författare)
- KTH,Elektronik och inbyggda system,IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden
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- Delmas, M. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Ivanov, R. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Evans, D. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Zurauskaite, L. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Almqvist, S. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Becanovic, S. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Hoglund, L. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Costard, E. (författare)
- IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden.
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- Hellström, Per-Erik, 1970- (författare)
- KTH,Elektronik och inbyggda system
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(creator_code:org_t)
- AIP Publishing, 2022
- 2022
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 132:20, s. 204501-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The surface leakage in InAs/GaSb type-II superlattice (T2SL) is studied experimentally and theoretically for photodiodes with small sizes down to 10 x 10 mu m(2). The dependence of dark current density on mesa size is studied at 110 and 200 K, and surface leakage is shown to impact both generation-recombination (GR) and diffusion dark current mechanisms. A quasi-3-dimensional model to simulate the fabrication process using surface traps on the pixel's sidewall is presented and is used to accurately represent the dark current of large and small pixels with surface leakage in the different temperature regimes. The simulations confirmed that the surface leakage current has a GR and diffusion component at low and high temperature, respectively. Finally, the surface leakage current has been correlated with the change in minority carrier concentration at the surface due to the presence of donor traps.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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