Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC

• The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.

Nyckelord

3C-SiC

MOS capacitors

oxide deposition

post-oxidation

interface traps

TZDB.

TECHNOLOGY

TEKNIKVETENSKAP

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