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Spin diode based on...
Spin diode based on Fe/MgO double tunnel junction
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- Iovan, Adrian (författare)
- KTH,Nanostrukturfysik
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- Andersson, Sebastian (författare)
- KTH,Nanostrukturfysik
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- Naidyuk, Yu. G. (författare)
- KTH,Nanostrukturfysik
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Vedyaev, A. (författare)
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Dieny, B. (författare)
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- Korenivski, Vladislav (författare)
- KTH,Nanostrukturfysik
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(creator_code:org_t)
- 2008-02-20
- 2008
- Engelska.
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 8:3, s. 805-809
- Relaterad länk:
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http://arxiv.org/pdf...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high > 1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, similar to 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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