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NbN thin films grow...
NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors
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- Iovan, Adrian (författare)
- KTH,Tillämpad fysik
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- Pedeches, A. (författare)
- Univ Cote Azur, CNRS, CRHEA, Sophia Antipolis, France.
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- Descamps, Thomas (författare)
- KTH,Tillämpad fysik
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- Rotella, H. (författare)
- Univ Cote Azur, CNRS, CRHEA, Sophia Antipolis, France.
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- Florea, I. (författare)
- Univ Cote Azur, CNRS, CRHEA, Sophia Antipolis, France.
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- Semond, F. (författare)
- Univ Cote Azur, CNRS, CRHEA, Sophia Antipolis, France.
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- Zwiller, Val (författare)
- KTH,Tillämpad fysik,Single Quantum BV, Rotterdamseweg 394, NL-2629HH Delft, Netherlands.
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(creator_code:org_t)
- AIP Publishing, 2023
- 2023
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 123:25
- Relaterad länk:
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Superconducting nanowire single photon detectors (SNSPDs) made with thin NbN films can reach high performances. While sputtering has been the deposition method of choice, here, we show that ammonia-molecular beam epitaxy (NH3-MBE) can produce pertinent epitaxial cubic NbN thin films on silicon substrates using an AlN buffer. Despite granular morphology and a high density of grain boundaries as well as the presence of rotational twins, Tc = 12.7 K for a 5.6 nm thick film and saturation of internal detection efficiency up to 850 nm are achieved. Morphology and stoichiometry as well as strain have a strong impact on the detector properties, highlighting the importance of a precise control of the growth parameters. These results pave the way for high fabrication yield of SNSPDs on large-scale silicon wafers using epitaxial NbN thin films grown by MBE.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
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- art (ämneskategori)
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