Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions

• We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We obtain the timing and amplitude parameters for the current and field pulses needed to achieve 100 ps range inertia-free switching under least-power dissipation. The considered method does not rely on the stochastics of thermal agitation of the magnetic nanoparticle typically accompanying spin-torque switching. The regime of ultimate switching speed efficiency found in this work is promising for applications in high-performance nonvolatile memory.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Magnetic tunneling

Magnetization

Switches

Magnetic fields

Junctions

Vectors

Perpendicular magnetic anisotropy

Double magnetic tunnel junction

fast magnetic switching

magnetic random access memory (MRAM)

spin-transfer torques (STT)

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)