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Comparative study o...
Comparative study of 4H-SiC irradiated with neutrons and heavy ions
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Kalinina, E (författare)
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Kholuyanov, G (författare)
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Onushkin, G (författare)
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Davydov, D. (författare)
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Strel'chuk, A. (författare)
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Konstantinov, A. (författare)
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- Hallén, Anders (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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Skuratov, V. (författare)
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Kuznetsov, A. (författare)
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(creator_code:org_t)
- ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD, 2005
- 2005
- Engelska.
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD. - 0878499636 ; , s. 377-380
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- SiC
- irradiation
- neutrons
- bismuth
- krypton
- luminescence
- defects
- deep level
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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