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The effect of hard ...
The effect of hard nitridation on Al(2)O(3) using a radio frequency operated plasma cell
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- Agnarsson, Björn (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Qi, B. (författare)
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- Götelid, Mats (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Olafsson, S. (författare)
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Gislason, H. P. (författare)
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(creator_code:org_t)
- Elsevier BV, 2011
- 2011
- Engelska.
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 519:22, s. 7796-7802
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on an atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) investigation of hard nitridation of sapphire (alpha.-Al(2)O(3)) substrate, using an Epi UNI-Bulb RF plasma cell at substrate temperatures ranging from 250 to 600 degrees C. Our results show that an AlN(1-x)O(x) layer forms on sapphire after extended nitridation at all temperatures, following a Stranski-Krastanov growth mode, with less islands forming at higher temperatures. We also observe a layer-dependent charging shift in XPS, separating smooth AlN(1-x)O(x) layers from rough AlN(1-x)O(x) islands due to their different electronic coupling to the substrate. Although the island growth is suppressed at higher temperatures, the surface roughness increases at higher temperatures as seen by AFM. We also observe sputtering effects with protrusions and pits.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- Nitridation
- Sapphire
- Al(2)O(3)
- Radio-frequency plasma
- X-ray photoelectron spectroscopy
- Atomic force microscopy
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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