Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

• The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. The lowest two subbands of the two-dimensional electron gas in the heterointerface were populated. After the low temperature illumination, the electron density increases from 11.99x10(12) cm(-2) to 13.40x10(12) cm(-2) for the first subband and from 0.66x10(12) cm(-2) to 0.94x10(12) cm(-2) for the second subband. The persistent photoconductivity effect (similar to 13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density of 9.40x10(12) cm(-2). We obtained the energy separation between the first and second subbands to be 105 meV.

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NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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