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Techniques for dept...
Techniques for depth profiling of dopants in 4H-SiC
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Osterman, J (författare)
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Hallen, A (författare)
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Anand, S (författare)
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visa fler...
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- Linnarsson, M K (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
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Andersson, H (författare)
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Aberg, D (författare)
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Panknin, D (författare)
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Skorupa, W (författare)
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visa färre...
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000. ; , s. 559-562
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- dopant activation; dopant profile; scanning capacitance microscopy (SCM); SEM; Spreading Resistance profiling (SRP)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)