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SHIFTING PHOTOLUMIN...
SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
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GISLASON, HP (författare)
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YANG, BH (författare)
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- LINNARSSON, M (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
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(creator_code:org_t)
- 1993
- 1993
- Engelska.
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 47, s. 9418-9424
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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