Sideband asymmetries in RF power LDMOS before and after digital predistortion

• The merging of the fields of RF engineering and signal processing has introduced concepts such as behavioral modeling and enabled digital linearization schemes for wireless devices, such as power amplifiers (PAs). Despite that this process has been going on for a number of years much work remains to be done. The links between physical behavior and mathematical models are far from well-understood as are the optimum strategies for device design. This study focus on digital predistortion properties of a one-stage PA consisting of a power transistor mounted in a test fixture. The device under test (DUT) is an Infineon PTF210451E, a 45W transistor intended for usage in the frequency bands 2010-2025 MHz and 2110-2170 MHz. The test fixture is also designed by Infineon Technologies.  The signal types used in the measurements are single and double carrier wideband code division multiple access (WCDMA) signals. The double carrier WCDMA signals have tone-spacings of 5, 10 and 15 MHz. Normal two-tone measurements are also presented.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

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