Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

• The hole mobilities of SiGe and SiGeC channel pMOSFETs fabricated on ultrathin silicon-on-insulator substrates are investigated and compared with reference Si channel devices. The total thickness of the fully depleted Si/SiGe(C)/Si body structure is similar to 25 nm. All devices demonstrated a near ideal subthreshold behavior, and the drive current and mobility were increased with more than 60% for SiGe and SiGeC channels. When comparing SIMOX and UNIBOND substrates, no significant difference could be detected.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Fully depleted (FD); Heterostructure; Mobility; MOSFETs; SiGe; SiGeC; Silicon-on-insulator (SOI) technology

Semiconductor physics

Halvledarfysik

Publication and Content Type

ref (subject category)

art (subject category)