A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering

• An experimental study is presented to compare two different schemes used to incorporate a high concentration of dopants at the silicide/silicon interface for NiSi and PtSi, i.e., dopant segregation, with the purpose of lowering the Schottky barrier height (SBH) of the contact systems. Specifically, the interfacial dopant is introduced either through silicidation-induced dopant segregation (SIDS) or by silicide as diffusion source (SADS). For the latter, a postimplantation drive-in anneal is needed. For both silicide systems, the dopant segregation gives rise to a predominant effect, leading to an effective SBH that is independent of the original SBHs of PtSi and NiSi, which differs by 0.2 eV. Scheme SUDS is relatively simple in processing, but the silicidation process is dopant-dependent, leading to local variations of silicide formation. Scheme SADS addresses the adverse effect of dopant on silicidation by separating silicidation from dopant incorporation.

Ämnesord

NATURVETENSKAP  -- Data- och informationsvetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences (hsv//eng)

Nyckelord

dopant segregation; Schottky barrier (SB) lowering; Schottky diode; silicide

Information technology

Informationsteknik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)