All epitaxial single-fused 1.55ÎŒm vertical cavity laser based on an InP Bragg reflector

• We have realised all epitaxial 1.55ÎŒm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10ÎŒs up to 5°C. The minimum threshold current density at room temperature is 1.8kA/cm2 for a device diameter of 55ÎŒm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Current density

Epitaxial growth

Etching

Laser pulses

Mirrors

Semiconducting aluminum compounds

Semiconducting gallium arsenide

Semiconducting indium phosphide

Bragg reflector lasers

Threshold current density

Vertical cavity surface emitting lasers

Wet etching

Semiconductor lasers

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