Sökning: id:"swepub:oai:DiVA.org:kth-83049" >
Sn-induced surface ...
Abstract
Ämnesord
Stäng
- Scanning tunneling microscopy (STM) has been used to study different Sn induced reconstructions on the Ge(111) surface; namely the (7 × 7), (5 × 5) and ( 3 × 3) R30° structures. The first two have been confirmed to be of the dimer adatom stacking faults (DAS) type with adatoms mainly being Sn. The ( 3 × 3)R30° superstructure was found at different Sn depositions. At 0.4 monolayer (ML) Sn coverage a homogeneous Sn adatom layer is adsorbed on the(1 × 1) surface in threefold sites directly over second-layer atoms (T4), while at low coverage, 0.1 ML, the top layer is a mixture of Sn and Ge atoms. We also propose the chemical identities of the different atoms seen in the STM images as related to their apparent height. © 1992.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Adsorption--Microscopic Examination
- Surfaces--Phase Transitions
- Tin and Alloys--Adsorption
- Adsorbate-Induced Surface Reconstructions
- Dimer Adatom Stacking Faults
- Scanning Tunneling Microscopy
- Semiconducting Tin Deposition
- Single Crystal Germanium Surfaces
- Semiconducting Germanium
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas