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The formation and c...
The formation and characterization of epitaxial titanium carbide contacts to 4H-SiC
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Lee, S. -K (författare)
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Danielsson, Erik (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Palmquist, J. -P (författare)
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Högberg, H. (författare)
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Jansson, U. (författare)
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(creator_code:org_t)
- San Francisco, CA, 2000
- 2000
- Engelska.
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Ingår i: Materials Research Society Symposium - Proceedings. - San Francisco, CA. ; , s. T691-T696
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Epitaxial TiC Ohmic and Schottky contacts to 4H-SiC were formed by a new deposition method, UHV co-evaporation with Ti and C60, at low temperature (< 500°C). We achieved a contact resistivity of 2 × 10-5 Ωcm2 at 25°C for as deposited Ohmic contacts on Al ion implanted 4H-Silicon carbide. The rectifying behavior of TiC Schottky contacts was also investigated using I-V and C-V. The measured Schottky barrier height (SBH) was 1.26 eV for n-type and 1.65 eV for p-type 4H-SiC using C-V measurements for frequencies ranging from 1kHz to 1MHz. LEED, RBS, XPS, and XRD measurements were performed to analyze composition ratio, interface reaction, and structural properties of the TiC epitaxial layer.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Annealing
- Current voltage characteristics
- Electric conductivity
- Epitaxial growth
- Interfaces (materials)
- Ion implantation
- Ohmic contacts
- Schottky barrier diodes
- Thermal effects
- Titanium carbide
- Schottky barrier heights (SBH)
- Silicon carbide
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)