Measurements and simulations of self-heating and switching with 4H-SIC power BJTs

• Transient measurements and device simulations were performed to investigate self-heating and switching with 4H-SiC BJTs. A current gain decrease was found during self-heating presumably due to reduced electron mobility with increasing temperature. Surface recombination increased the simulated maximum temperature but the current gain decrease during self-heating was similar as for bulk recombination. A fast switching of 0.5 A and 200 V was shown with a voltage rise-time of about 70 ns and fall-time of 50 ns. Turn-off measurements show a noticeable delay time before fall-off of the emitter current, indicating a significant amount of stored carriers in the base.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Charge carriers

Computer simulation

Electron mobility

Silicon carbide

Inductive load switching

Heterojunction bipolar transistors

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)