High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme

• Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Epitaxial growth; Lithography; Semiconducting indium gallium arsenide; Cavity region; Differential efficiency; Electrical confinement scheme

Semiconductor physics

Halvledarfysik

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