Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds

• Four different chlorinated compounds: 2-chloropropane, dichloromethane, chloroform and carbon tetrachloride have been used to etch InGaAsP/InP MQW laser structures partially masked. Etching experiments were performed in a home-made LP-MOCVD reactor with argon or argon + hydrogen as carrier gas, using phosphine (PH3) or tertiarybutylphosphine (TBP) to prevent thermal decomposition. The etching temperature as well as the chlorinated compound flow were varied to obtain the best trade-off between etch rate and surface morphology. The optimized experimental conditions were applied to etch mesa stripes in a SCH-MQW laser structure, for the first time to our knowledge, followed by lateral InP : Fe regrowth in the same step. Threshold current as low as 4 mA (best value)-6 mA (typical value) and differential quantum efficiency higher than 20% for SI-BM MQW laser have been achieved.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Argon

Carbon tetrachloride

Etching

Hydrogen

Metallorganic chemical vapor deposition

Morphology

Pyrolysis

Quantum efficiency

Semiconducting indium phosphide

Semiconductor device structures

Semiconductor quantum wells

Chloroform

Chloropropane

Dichloromethane

Low-pressure metallorganic chemical vapor deposition

Tertiarybutylphosphine

Semiconductor physics

Halvledarfysik

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