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Photoluminescence t...
Photoluminescence topography of fluorescent SiC and its corresponding source crystals
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- Wilhelm, Martin (författare)
- University of Erlangen-Nuremberg, Erlangen, Germany
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- Kaiser, Michl (författare)
- University of Erlangen-Nuremberg, Erlangen, Germany
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- Jakubavicius, Valdas (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Ou, Y. (författare)
- Technical University of Denmark, Lyngby, Denmark
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- Ou, H. (författare)
- Technical University of Denmark, Lyngby, Denmark
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- Wellmann, P. (författare)
- University of Erlangen-Nuremberg, Erlangen, Germany
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(creator_code:org_t)
- Trans Tech Publications Inc. 2013
- 2013
- Engelska.
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Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 421-424
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
Nyckelord
- luminescent SiC; 6H-SiC; epitaxy; photoluminescence topography
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)