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Reactive DC magnetr...
Reactive DC magnetron sputtering of amorphous (Ti0.25B0.75)1−xSixNy thin films from TiB2 and Si targets
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- Fager, Hanna (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Eriksson, Fredrik (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Lu, Jun (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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visa fler...
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- Jensen, Jens (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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visa färre...
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(creator_code:org_t)
- 2014
- Engelska.
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- (Ti0.25B0.75)1−xSixNy, 0≤x≤0.89, 0.9≤y≤1.25, thin films were reactively grown on Si(001) substrates by dc magnetron sputtering from compound TiB2 and elemental Si targets. The films can be grown in a fully electron-diffraction amorphous state with x>0.46, as evidenced by XRD and HR-TEM investigations. With x=0, BN form onion-like sheets surrounding TiNnanograins. Substrate temperatures, Ts=100-600 ◦C, has a minor effect of the film structure and properties, due to limited surface diffusion.Ion-assisted growth with substrate bias voltages, Vb, between -50 V and -200 V, favors densification of amorphous structures over nanocrystalline formation, and improves mechanical properties. A maximum hardness value of 26.8±0.7 GPa is found for an amorphous (Ti0.25B0.75)0.39Si0.61N1.15 film grown with substrate temperature Ts=400 °C and substrate bias voltage Vb=-100 V.
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