Highly Si-doped Al0.72Ga0.28N layers: n-type conductivity bound by the process temperature

• Establishing n- and p- type conductivity via intentional doping in epitaxial layers is fundamental to any semiconductor material system and its relevant device applications. Process parameters such as temperature, precursor gas-flow-rates and pressure may all control intentional doping in metal-organic chemical vapour deposition (MOCVD) of semiconductor materials. The incorporation of impurities such as carbon and oxygen may also be affected by the same process parameters, and the concentration of these impurities has a direct impact on the electrical, optical and thermal properties of epitaxial layers, as has been observed in the MOCVD of technologically-important III-V semiconductor materials such as AlGaAs and GaN.

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