Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations

• In freestanding n-type 4H-SiC epilayers irradiated with low-energy (250 keV) electrons at room temperature, the electron paramagnetic resonance (EPR) spectrum of the negative carbon vacancy at the hexagonal site, V-C(-)(h), and a new signal were observed. From the similarity in defect formation and the spin-Hamiltonian parameters of the two defects, the new center is suggested to be the negative C vacancy at the quasi-cubic site, V-C(-)(k). The identification is further supported by hyperfine calculations.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Keramteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Ceramics (hsv//eng)

Keyword

Carbon vacancy; negative-U behavior; electron irradiation; EPR; supercell calculations

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)