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Lateral Enlargement...
Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
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- Jokubavicius, Valdas (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yazdi, G. Reza (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Liljedahl, Rickard (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Ivanov, Ivan Gueorguiev (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2014-11-03
- 2014
- Engelska.
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 14:12, s. 6514-6520
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of 3C-SiC domains along the step-flow direction is outlined. Growth process stability and reproducibility of high crystalline quality material are demonstrated in a series of 3C-SiC samples with a thickness of about 1 mm. The average values of full width at half-maximum of ω rocking curves on these samples vary from 34 to 48 arcsec indicating high crystalline quality compared to values found in the literature. The low temperature photoluminescence measurements also confirm a high crystalline quality of 3C-SiC and indicate that the residual nitrogen concentration is about 1–2 × 1016 cm–3. Such a 3C-SiC growth concept may be applied to produce substrates for homoepitaxial 3C-SiC growth or seeds which could be explored in bulk growth of 3C-SiC.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
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