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Thin Ion-Gel Dielec...
Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors
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- Won Lee, Sung (författare)
- Yonsei University, South Korea
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- Shin, Minkwan (författare)
- Yonsei University, South Korea
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- Yoon Park, Jae (författare)
- Yonsei University, South Korea
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- Soo Kim, Bong (författare)
- Yonsei University, South Korea
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- Tu, Deyu (författare)
- Linköpings universitet,Informationskodning,Tekniska högskolan
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- Jeon, Sanghun (författare)
- Korea University, South Korea
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- Jeong, Unyong (författare)
- Yonsei University, South Korea
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(creator_code:org_t)
- AMER SCIENTIFIC PUBLISHERS, 2015
- 2015
- Engelska.
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Ingår i: Science of Advanced Materials. - : AMER SCIENTIFIC PUBLISHERS. - 1947-2935 .- 1947-2943. ; 7:5, s. 874-880
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Organic Thin Film Transistors; Polymer Transistors; Ion-Gel Dielectric; High Capacitance; Device Stability; poly(3-hexylthiophene)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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