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AlGaN/GaN high elec...
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
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- Bergsten, Johan (författare)
- Chalmers, Gothenburg, Sweden
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- Li, Xun (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Nilsson, Daniel (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Danielsson, Örjan (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Pedersen, Henrik (författare)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Forsberg, Urban (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Rorsman, Niklas (författare)
- Chalmers, Gothenburg, Sweden
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(creator_code:org_t)
- Institute of Physics Publishing (IOPP), 2016
- 2016
- Engelska.
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Ingår i: Japanese Journal of Applied Physics. - : Institute of Physics Publishing (IOPP). - 0021-4922 .- 1347-4065. ; 55, s. 05FK02-1-05FK02-4
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.7...
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Abstract
Ämnesord
Stäng
- AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (ämneskategori)
- art (ämneskategori)
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