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Infrared dielectric...
Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1-xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
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- Schoche, S. (författare)
- University of Nebraska, NE 68588 USA
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- Hofmann, Tino (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,University of Nebraska, NE 68588 USA
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- Nilsson, Daniel (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Kakanakova-Gueorguie, Anelia (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Kuhne, Philipp (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Lorenz, K. (författare)
- University of Lisbon, Portugal
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- Schubert, Mathias (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,University of Nebraska, NE 68588 USA; Leibniz Institute Polymer Research Dresden, Germany
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- AMER INST PHYSICS, 2017
- 2017
- Engelska.
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 121:20
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on the analysis of a combined mid-infrared spectroscopic ellipsometry and mid-infrared optical Hall effect investigation of wurtzite structure c-plane oriented, crack-free, single crystalline, and high-Al-content AlxGa1-xN layers on 4H-SiC. For high-Al-content AlxGa1-xN, a two mode behavior is observed for both transverse and longitudinal branches of the infrared-active modes with E-1 symmetry, while a single mode behavior is found for the longitudinal modes with A1(LO) symmetry. We report their mode dependencies on the Al content. We determine and discuss static and high frequency dielectric constants depending on x. From the analysis of the optical Hall effect data, we determine the effective mass parameter in high-Al-content AlxGa1-xN alloys and its composition dependence. Within the experimental uncertainty limits, the effective mass parameters are found isotropic, which depend linearly on the Al content. The combination of all data permits the quantification of the free electron density N and mobility parameters mu. Published by AIP Publishing.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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