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Optical Study of Su...
Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars
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- Higo, Akio (författare)
- WPI-Advanced Institute for Material Research, Tohoku University, Sendai , Japan
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- Kiba, Takayuki (författare)
- Kitami Institute of Technology, Kitami, Japan
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- Chen, Shula, 1986- (författare)
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan
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- Chen, Yafeng (författare)
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan
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- Tanikawa, Tomoyuki (författare)
- Institute for Materials Research, Tohoku University, Sendai, Japan
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- Thomas, Cedric (författare)
- Institute of Fluid Science, Tohoku University, Sendai, Japan
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- Lee, Chang Yong (författare)
- Institute of Fluid Science, Tohoku University, Sendai, Japan
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- Lai, Yi-Chun (författare)
- WPI-Advanced Institute for Material Research, Tohoku University, Sendai , Japan
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- Ozaki, Takuya (författare)
- Institute of Fluid Science, Tohoku University, Sendai, Japan
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- Takayama, Junichi (författare)
- Graduate School of Information Science and Technology, Hokkaido University
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- Yamashita, Ichiro (författare)
- Nara Institute of Science and Technology, Ikoma, Japan
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- Murayama, Akihiro (författare)
- Graduate School of Information Science and Technology, Hokkaido University
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- Samukawa, Seiji (författare)
- WPI-Advanced Institute for Material Research, Tohoku University, Sendai, Japan; Institute of Fluid Science, Tohoku University, Sendai, Japan
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(creator_code:org_t)
- 2017-06-21
- 2017
- Engelska.
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Ingår i: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 4:7, s. 1851-1857
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have demonstrated the fabrication of homogeneously distributed In0.3Ga0.7N/GaN quantum nanodisks (QNDs) with a high density and average diameter of 10 nm or less in 30-nm-high nanopillars. The scalable top-down nanofabrication process used biotemplates that were spin-coated on an In0.3Ga0.7N/GaN single quantum well (SQW) followed by low-damage dry etching on ferritins with 7 nm diameter iron cores. The photoluminescence measurements at 70 K showed a blue shift of quantum energy of 420 meV from the In0.3Ga0.7N/GaN SQW to the QND. The internal quantum efficiency of the In0.3Ga0.7N/GaN QND was 100 times that of the SQW. A significant reduction in the quantum-confined Stark effect in the QND structure was observed, which concurred with the numerical simulation using a 3D Schrödinger equation. These results pave the way for the fabrication of large-scale III–N quantum devices using nanoprocessing, which is vital for optoelectronic communication devices.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- III−N compound semiconductor; photoluminescence; quantum nanodisk
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Higo, Akio
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Kiba, Takayuki
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Chen, Shula, 198 ...
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Chen, Yafeng
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Tanikawa, Tomoyu ...
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Thomas, Cedric
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Lee, Chang Yong
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Lai, Yi-Chun
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Ozaki, Takuya
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Takayama, Junich ...
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Yamashita, Ichir ...
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Murayama, Akihir ...
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Samukawa, Seiji
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- NATURVETENSKAP
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ACS Photonics
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