Search: id:"swepub:oai:DiVA.org:liu-143630" >
Metal-dielectric tr...
Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)
-
- Niu, Y. R. (author)
- Linköping University,Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Cardiff University
-
- Zakharov, A. A. (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
-
- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
(creator_code:org_t)
- ELSEVIER SCIENCE BV, 2017
- 2017
- English.
-
In: Ultramicroscopy. - : ELSEVIER SCIENCE BV. - 0304-3991 .- 1879-2723. ; 183, s. 49-54
- Related links:
-
https://orca.cardiff...
-
show more...
-
http://dx.doi.org/10... (free)
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://lup.lub.lu.s...
-
show less...
Abstract
Subject headings
Close
- The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices. (C) 2017 Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database