Magnetron sputtering of Ti3SiC2 thin films from a Ti3SiC2 compound target

• Ti3 Si C2 thin films were synthesized by magnetron sputtering from Ti3 Si C2 and Ti targets. Sputtering from a Ti3 Si C2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3 Si C2 target is shown to bind the excess C in Ti Cx intergrown with Ti3 Si C2 and Ti4 Si C3. Additionally, a substoichiometric Ti Cx buffer layer is shown to serve as a C sink and enable the growth of Ti3 Si C2.

Nyckelord

NATURAL SCIENCES

NATURVETENSKAP

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)