• The aim of this study was to propose a growth procedure for preparation of crack-free thick aluminum nitride (AlN) layers that can be easily separated from the substrate. The overall process is based on the physical vapor transport method employing a seed and a source material. In this case, the substrate is an epitaxial 4H-SiC layer and the growth of AlN is initiated at etch pits formed during the ramp up time prior to establishing growth temperature. Development of hexagonal pyramids on which arrays of microrods are formed is the core of the growth procedure. Free-standing wafers having 10 mm diameter and about 120 μm thick have been fabricated.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

A1. X-ray topography; A2. Growth from vapor; A2. Single-crystal growth; B2. Semiconducting III–V materials

Physics

Fysik

Publikations- och innehållstyp

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