On the switching mechanism in Rose Bengal-based memory devices

• Impedance switching has been observed in many organic devices, but the mechanism is still a matter of debate. Reliable switch devices consisting of an organic layer of Rose Bengal derivatives sandwiched in between indium tin oxide and aluminum electrodes were fabricated. Modifying the chemical nature of the organic layers and visualizing the temperature distribution in the organic memory rule out several mechanisms. It is shown that the memory effect originates from filamentary switching.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Impedance switching

Resistance switching

Filaments

Rose Bengal

Indium tin oxide

Aluminum

Electronics

Elektronik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)