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Aluminum doping of ...
Aluminum doping of epitaxial Silicon Carbide
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- Forsberg, Urban, 1971- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Danielsson, Örjan (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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- Henry, Anne (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Linnarsson, M. K. (author)
- Solid State Electronics, Royal Institute of Technology, SE-164 40, Kista, Sweden
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- ScienceDirect, 2003
- 2003
- English.
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In: Journal of Crystal Growth. - : ScienceDirect. - 0022-0248 .- 1873-5002. ; 253:1-4, s. 340-350
- Related links:
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http://urn.kb.se/res...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50°C. The highest atomic concentration of aluminum observed in this study was 3×1017 and 8×1018 cm−3 in Si and C-face, respectively.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Annan teknik -- Övrig annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)
Keyword
- A1. Doping; A1. Growth models; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide
- Material physics with surface physics
- Materialfysik med ytfysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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