Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD

• Metal semiconductor field effect transistor structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these multi structures has been performed by using scanning electron microscopy , secondary ion mass spectrometry, capacitance-voltage and low temperature photoluminescence. Optimisation of growth parameters has resulted in very abrupt doping profiles. The grown metal semiconductor field effect transistor structures have been processed and parts of the transistor properties are presented.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

Keyword

Hot-Wall CVD

MESFET

Silicon carbide

SEM

SIMS

Material physics with surface physics

Materialfysik med ytfysik

Publication and Content Type

ref (subject category)

kon (subject category)